Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Drill string Vibration Modeling Including Coupling Effects

Abstract: The governing equations of motion for a drill string considering coupling between axial, lateral and torsional vibrations are obtained using a Lagrangian approach. The result leads to a set of non-linear equations with time varying coefficients. A fully coupled model for axial, lateral, and torsional vibrations of drill strings is presented. The bit/formation interactions are assumed ...

متن کامل

High Concentration of Interface Traps in MOS Transistor Modeling

Steady-state recombination-generation-trapping of holes and electrons at one-electron neutral traps (charge states 0 and −1) located at the SiO2/Si interface is employed to investigate the effects of high concentration of interface traps on the recombination dc base-terminal current vs gate-voltage (R-DCIV or IB-VGB) and gate capacitance vs gate-voltage (CV or Cgb-VGB) properties of inversion n...

متن کامل

Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs

We employ a novel multi-configurational selfconsistent Green’s function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio...

متن کامل

Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs

An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...

متن کامل

Investigation of Space Charge Compensation at Fets

In order to contribute to the development of high power proton accelerators in the MW range, to prepare the way for an ISIS upgrade and to contribute to the UK design effort on neutrino factories, a front end test stand (FETS) is being constructed at the Rutherford Appleton Laboratory (RAL) in the UK [1]. The aim of the FETS is to demonstrate the production of a 60 mA, 2 ms, 50 pps chopped beam...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Electron Devices

سال: 2019

ISSN: 0018-9383,1557-9646

DOI: 10.1109/ted.2019.2944193